Solid-state imaging device and electronic apparatus with a charge storage unit electrically connected to each of a lower electrode of a phase difference detection pixel, an adjacent pixel and a normal pixel via a capacitance, wherein the capacitance connected to the adjacent pixel is greater than a capacitance connected to the normal pixel

ABSTRACT

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

This application is Continuation application of U.S. patent applicationSer. No. 16/638,879 filed on Feb. 13, 2020, which is a U.S. NationalPhase of International Patent Application No. PCT/JP2018/019650 filed onMay 22, 2018, which claims priority benefit of Japanese PatentApplication No. JP 2017-159231 filed in the Japan Patent Office on Aug.22, 2017. Each of the above-referenced applications is herebyincorporated herein by reference in its entirety.

FIELD

The present disclosure relates to a solid-state imaging device and anelectronic apparatus.

BACKGROUND

In recent years, an imaging apparatus has adopted a method of detectinga phase difference using a pair of phase difference detection pixelshaving asymmetric sensitivity with respect to an incident angle oflight, as an autofocus function. An example of this includes asolid-state imaging device disclosed in Patent Literature 1 below.Specifically, in Patent Literature 1 described below, a light shieldingfilm is provided partially to implement a phase difference detectionpixel having a sensitivity that is asymmetric with respect to theincident angle of light. Alternatively, in Patent Literature 1 below,the shape of a lower electrode is formed different from the shape of thelower electrode of a normal pixel that generates a signal for imagegeneration, and thereby achieves a phase difference detection pixelhaving asymmetric sensitivity with respect to the incident angle.

CITATION LIST Patent Literature

Patent Literature 1: JP 2015-50331 A

SUMMARY Technical Problem

In the technology disclosed in Patent Literature 1, a light shieldingfilm is provided so as to cover a part of the phase difference detectionpixel to block light, and thus, the light incident on the pixel is notconsidered to be sufficiently utilized. Therefore, the solid-stateimaging device according to Patent Literature 1 has a limitation inimproving the light detection sensitivity. Furthermore, in PatentLiterature 1, a charge unnecessary for phase difference detection mightbe generated in detecting the phase difference, depending on the shapeof the lower electrode. In such a case, it is necessary to provide amechanism (such as a plug) for discharging an unnecessary charge inorder to avoid generation of noise due to the unnecessary charge.However, in a case where a discharge mechanism is provided, it would benecessary to ensure a certain area in order to provide the mechanism,leading to limitation in miniaturization of the solid-state imagingdevice.

In view of the above situation, the present disclosure proposes a noveland improved solid-state imaging device and electronic apparatus thatcan improve detection sensitivity while enabling miniaturization ofpixels.

Solution to Problem

According to the present disclosure, a solid-state imaging device isprovided that includes: a substrate having a pixel array unit sectionedinto a matrix; a plurality of normal pixels, a plurality of phasedifference detection pixels, and a plurality of adjacent pixels adjacentto the phase difference detection pixels, each provided in each of theplurality of sections; wherein each of the normal pixel, the phasedifference detection pixel, and the adjacent pixel has a photoelectricconversion film, and an upper electrode and a lower electrode thatsandwich the photoelectric conversion film in a thickness direction ofthe photoelectric conversion film, the lower electrode, in the normalpixel, is provided separately for each of sections in which the normalpixel is provided, and the lower electrode, in the adjacent pixel,extends from the section in which the adjacent pixel is provided to thesection in which the phase difference detection pixel adjacent to theadjacent pixel is provided, when viewed from above the substrate.

Moreover, according to the present disclosure, an electronic apparatusincluding a solid-state imaging device is provided, the solid-stateimaging device comprising: a substrate having a pixel array unitsectioned into a matrix; a plurality of normal pixels, a plurality ofphase difference detection pixels, and a plurality of adjacent pixelsadjacent to the phase difference detection pixels, each provided in eachof the plurality of sections; wherein each of the normal pixel, thephase difference detection pixel, and the adjacent pixel has aphotoelectric conversion film, and an upper electrode and a lowerelectrode that sandwich the photoelectric conversion film in a thicknessdirection of the photoelectric conversion film, the lower electrode, inthe normal pixel, is provided separately for each of sections in whichthe normal pixel is provided, and the lower electrode, in the adjacentpixel, extends from the section in which the adjacent pixel is providedto the section in which the phase difference detection pixel adjacent tothe adjacent pixel is provided, when viewed from above the substrate.

Advantageous Effects of Invention

As described above, according to the present disclosure, it is possibleto improve detection sensitivity while enabling miniaturization ofpixels.

Note that the above-described effect is not necessarily limited, and itis also possible to use any of the effects illustrated in thisspecification together with the above-described effect or in place ofthe above-described effect, or other effects that can be assumed fromthis specification.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating a planar configuration example of asolid-state imaging device according to an embodiment of the presentdisclosure.

FIG. 2 is a view illustrating a cross-sectional configuration example ofa normal pixel according to an embodiment of the present disclosure.

FIG. 3 is a view illustrating a cross-sectional configuration example ofa phase difference detection pixel and adjacent pixels according to afirst embodiment of the present disclosure.

FIG. 4 is a view illustrating a planar configuration example of a pixelarray unit according to the embodiment.

FIG. 5 is a graph illustrating an output with respect to an incidentangle of a pair of phase difference detection pixels according to theembodiment.

FIG. 6 is a view illustrating a planar configuration example of a pixelarray unit according to a first modification of the embodiment.

FIG. 7 is a view illustrating a planar configuration example of a pixelarray unit according to a second modification of the embodiment.

FIG. 8 is a view illustrating a planar configuration example of a pixelarray unit according to a third modification of the embodiment.

FIG. 9 is a view illustrating a planar configuration example of a pixelarray unit according to a fourth modification of the embodiment.

FIG. 10 is a view illustrating a cross-sectional configuration exampleof a phase difference detection pixel and adjacent pixels according to asecond embodiment of the present disclosure.

FIG. 11 is a view illustrating a planar configuration example of thepixel array unit according to the embodiment.

FIG. 12 is a view illustrating a cross-sectional configuration exampleof a phase difference detection pixel and adjacent pixels according to athird embodiment of the present disclosure.

FIG. 13 is a view illustrating a cross-sectional configuration exampleof a phase difference detection pixel and adjacent pixels according to amodification of the embodiment.

FIG. 14 is a view (part 1) illustrating a fourth embodiment of thepresent disclosure.

FIG. 15 is a graph (part 2) illustrating the embodiment.

FIG. 16 is a view (part 3) illustrating the embodiment.

FIG. 17 is a graph (part 4) illustrating the embodiment.

FIG. 18 is a diagram illustrating an example of an electronic apparatusincluding an imaging apparatus having a solid-state imaging deviceaccording to an embodiment of the present disclosure.

DESCRIPTION OF EMBODIMENTS

Hereinafter, preferred embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings. Notethat same reference numerals are given to components havingsubstantially a same functional configuration, and redundant descriptionwill be omitted in the present specification and the drawings.

Furthermore, in this specification and the drawings, a plurality ofconstituents having substantially a same or similar function may bedistinguished by giving the same reference numerals followed bydifferent numbers in some cases. However, in a case where there is noneed to particularly distinguish each of a plurality of constituentshaving substantially the same or similar functional configuration, thesame reference numerals alone will be attached. Furthermore, similarconstituents of different embodiments will be distinguished by attachingdifferent alphabets after the same reference numerals in some cases.However, in a case where there is no need to particularly distinguisheach of similar constituents, the same reference numerals alone will beattached.

The drawings referred to in the following description are drawings forfacilitating the description and understanding of an embodiment of thepresent disclosure. Therefore, shapes, dimensions and ratios illustratedin the drawings might be different from the actual case. Furthermore,the design of the solid-state imaging device illustrated in the drawingcan be appropriately changed in design in consideration of the followingdescription and known techniques. In the description using across-sectional view of the solid-state imaging device, the up-downdirection of the stacked structure of the solid-state imaging devicecorresponds to the relative direction when the light incident surface ofthe solid-state imaging device is defined as an upper direction.Therefore, the direction in description might be different from anup-down direction according to the actual gravitational acceleration.

The shapes expressed in the following description not only representgeometrically defined shapes, but also include shapes includingtolerable differences (error/distortion) in the operation of thesolid-state imaging device and the manufacturing process of thesolid-state imaging device, as the shape similar to the defined shape.

Furthermore, in the following description, “electrical connection” meansconnection of a plurality of elements directly or indirectly via otherelements.

The description will be given in the following order.

1. Schematic configuration of solid-state imaging device

2. Detailed configuration of normal pixels

3. Background of embodiments of the present disclosure on the side ofthe inventors

4. First Embodiment

4.1 Detailed configuration of solid-state imaging device

4.2 Detection method of phase difference

4.3 Modification

5. Second Embodiment

6. Third Embodiment

6.1 Detailed configuration of solid-state imaging device

6.2 Modification

7. Fourth Embodiment

8. Fifth Embodiment

9. Summary

10. Supplement

1. SCHEMATIC CONFIGURATION OF SOLID-STATE IMAGING DEVICE

First, a schematic configuration of a solid-state imaging device 1according to an embodiment of the present disclosure will be describedwith reference to FIG. 1 . FIG. 1 is a diagram illustrating a planarconfiguration example of the solid-state imaging device 1 according toan embodiment of the present disclosure. As illustrated in FIG. 1 , thesolid-state imaging device 1 according to an embodiment of the presentdisclosure includes, on a semiconductor substrate 10 formed of silicon,for example, a pixel array unit 30 having a plurality of pixels 100arranged in a matrix, and a peripheral circuit unit provided so as tosurround the pixel array unit 30. Furthermore, the solid-state imagingdevice 1 includes, as the peripheral circuit unit, a vertical drivecircuit unit 32, a column signal processing circuit unit 34, ahorizontal drive circuit unit 36, an output circuit unit 38, a controlcircuit unit 40, or the like Details of each of blocks of thesolid-state imaging device 1 will be described below.

(Pixel Array Unit 30)

The pixel array unit 30 includes a plurality of pixels 100two-dimensionally arranged in a matrix as described above. The pluralityof pixels 100 further include a normal pixel 100 x for generating asignal for image generation and a pair of phase difference detectionpixels 100 a and 100 b for generating a signal for focus detection. Inother words, some of the plurality of normal pixels 100 x in the pixelarray unit 30 have been replaced with the phase difference detectionpixels 100 a and 100 b. Furthermore, as will be described below, thepixel array unit 30 in the embodiment of the present disclosure includesan adjacent pixel 100 c adjacent to the phase difference detectionpixels 100 a and 100 b. Here, a pixel represents one unit that detectslight and is output as one unit as a result in the output of thedetection result, and specifically represents the normal pixel 100 x,the phase difference detection pixel 100 a or 100 b, or the like.

Specifically, the pair of phase difference detection pixel 100 a and thephase difference detection pixel 100 b is formed to have asymmetricsensitivity with respect to the incident angle of light. In this manner,the pair of phase difference detection pixels 100 a and 100 b hasasymmetry with mutually different sensitivities with respect to theincident angle of light, leading to an occurrence of a shift in adetected image. The imaging apparatus (not illustrated) using thesolid-state imaging device 1 calculates a defocus amount on the basis ofthis shift of images (phase difference), and adjusts (moves) the imaginglens (not illustrated), making it possible to implement autofocusing.The pair of phase difference detection pixels 100 a and 100 b may bearranged in a left-right direction (horizontal direction) in FIG. 1 , orarranged in an up-down direction (vertical direction) in FIG. 1 .

Each of the pixels 100 includes a photoelectric conversion element and aplurality of pixel transistors (for example, Metal-Oxide-Semiconductor(MOS) transistors) (not illustrated). Specifically, pixel transistorincludes four types of MOS transistors, namely, a transfer transistor, aselection transistor, a reset transistor, and an amplificationtransistor, for example.

Each of the pixels 100 may have a shared pixel structure. In such acase, the pixel sharing structure includes a plurality of photoelectricconversion elements, a plurality of transfer transistors, one sharedfloating diffusion node (charge storage unit 24), and one sharedtransistor (not illustrated). That is, in the shared pixel structure,the photoelectric conversion elements and the transfer transistorsconstituting the plurality of unit pixels share one floating diffusionnode and the shared transistor. The detailed structure of the normalpixel 100 x will be described below.

(Vertical Drive Circuit Unit 32)

The vertical drive circuit unit 32 includes a shift register, forexample, selects a pixel drive wire 42, supplies a pulse for driving thepixel 100 to the selected pixel drive wire 42, and drives the pixels 100in units of rows. That is, the vertical drive circuit unit 32selectively scans each of the pixels 100 of the pixel array unit 30 inthe vertical direction (up-down direction in FIG. 1 ) sequentially inunits of rows, and supplies a pixel signal based on the signal chargegenerated in accordance with the amount of light received by thephotoelectric conversion element of each of the pixels 100 to the columnsignal processing circuit unit 34, which will be described below,through a vertical signal line 44.

(Column Signal Processing Circuit Unit 34)

The column signal processing circuit unit 34 is arranged for each ofcolumns of the pixels 100, and performs signal processing such as noiseremoval for each of pixel columns on the pixel signals output from thepixels 100 for one row. For example, the column signal processingcircuit unit 34 performs signal processing such as Correlated DoubleSampling (CDS) and Analog-Degital (A/D) conversion in order to removepixel-specific fixed pattern noise.

(Horizontal Drive Circuit Unit 36)

The horizontal drive circuit unit 36 includes a shift register, forexample, sequentially outputs horizontal scanning pulses to sequentiallyselect each of the column signal processing circuit units 34 describedabove, and performs control to output the pixel signal from each of thecolumn signal processing circuit units 34 to a horizontal signal line46.

(Output Circuit Unit 38)

The output circuit unit 38 performs signal processing on the pixelsignals sequentially supplied from each of the column signal processingcircuit units 34 described above through the horizontal signal line 46,and outputs the processed signals. The output circuit unit 38 mayfunction as a functional unit that performs buffering, for example, ormay perform processing such as black level adjustment, column variationcorrection, and various digital signal processing. Note that bufferingmeans temporarily storing pixel signals in order to compensate fordifferences in processing speed and transfer speed in exchanging pixelsignals. In addition, an input/output terminal 48 is a terminal forexchanging signals with an external device.

(Control Circuit Unit 40)

The control circuit unit 40 receives an input clock and data for givingan instruction on an operation mode or the like, and outputs data suchas internal information of the solid-state imaging device 1. That is,the control circuit unit 40 generates a clock signal and a controlsignal to be a reference of operation of the vertical drive circuit unit32, the column signal processing circuit unit 34, the horizontal drivecircuit unit 36, or the like, on the basis of a vertical synchronizationsignal, a horizontal synchronization signal, and a master clock. Then,the control circuit unit 40 outputs the generated clock signal andcontrol signal to the vertical drive circuit unit 32, the column signalprocessing circuit unit 34, the horizontal drive circuit unit 36, or thelike.

2. DETAILED CONFIGURATION OF NORMAL PIXELS

Next, a detailed configuration, in the cross-sectional structure, of thenormal pixel 100 according to an embodiment of the present disclosurewill be described with reference to FIG. 2 . FIG. 2 is a viewillustrating a cross-sectional configuration example of the normal pixel100 x according to an embodiment of the present disclosure.Specifically, the view corresponds to a portion of the cross sectionobtained by cutting the two normal pixels 100 x of the pixel array unit30 in the thickness direction of the semiconductor substrate 10.

As illustrated in FIG. 2 , in the normal pixel 100 x, two semiconductorregions 14 a and 14 b having a second conductivity type (for example,N-type) are formed on a semiconductor region 12 having a firstconductivity type (for example, P-type) of the semiconductor substrate10 formed of silicon, for example, so as to overlap with each other inthe thickness direction of the semiconductor substrate 10. Thesemiconductor regions 14 a and 14 b formed in this manner make a PNjunction to become two stacked photoelectric conversion elements (PD)202 and 204, respectively. For example, the PD 202 having thesemiconductor region 14 a as a charge storage region is a photoelectricconversion element that absorbs blue light (for example, a wavelength of450 nm to 495 nm) and generates charges (photoelectric conversion). ThePD 204 having the semiconductor region 14 b as a charge storage regionis a photoelectric conversion element that absorbs red light (forexample, a wavelength of 620 nm to 750 nm) and generates charges.

In addition, a wiring layer 16 is provided in a region of thesemiconductor substrate 10 located on the opposite side of thesemiconductor region 12 (lower side in FIG. 2 ). The wiring layer 16includes a plurality of pixel transistors (not illustrated) that readout the charges stored in the PDs 202 and 204, and a plurality of wires18 formed of tungsten (W), aluminum (Al), copper (Cu), or the like.

Furthermore, a plug 20 is provided on the semiconductor substrate 10 soas to penetrate the semiconductor substrate 10. The plug 20 is used toextract the charge photoelectrically converted by a photoelectricconversion film 300 described below, to the wiring layer 16. In order tosuppress a short circuit with the semiconductor region 12, an insulatingfilm 22 such as SiO₂ or SiN is formed on the outer periphery of the plug20. The plug 20 may be connected to the floating diffusion node (chargestorage unit) 24 provided in the semiconductor region having the secondconductivity type (for example, N type) provided in the semiconductorsubstrate 10, by the wire 18 provided in the wiring layer 16. Note thatthe floating diffusion node 24 is a region that temporarily holdscharges photoelectrically converted by the photoelectric conversion film300.

As illustrated in FIG. 2 , there is provided a transparent insulatingfilm 400 formed of a laminated film of two or three layers of a hafniumoxide (HfO₂) film and a silicon oxide film, for example, on thesemiconductor substrate 10. Since the transparent insulating film 400can transmit light, the PDs 202 and 204 provided below can receive lightand perform photoelectric conversion.

On the transparent insulating film 400, the photoelectric conversionfilm 300 is provided so as to be sandwiched between an upper electrode302 and a lower electrode 304 x. The photoelectric conversion film 300,the upper electrode 302, and the lower electrode 304 x constitute a PD200. For example, the PD 200 is a photoelectric conversion element thatabsorbs green light (for example, a wavelength of 495 nm to 570 nm) andgenerates charges (photoelectric conversion). The upper electrode 302and the lower electrode 304 x can be formed of a transparent conductivefilm such as an indium tin oxide (ITO) film or an indium zinc oxidefilm, for example. Although details will be described below, the phasedifference is detected in the PD 200 included in the phase differencedetection pixels 100 a and 100 b. Details of the material of thephotoelectric conversion film 300 will be described below.

Furthermore, as illustrated in FIG. 2 , the upper electrode 302 isprovided to be shared by a plurality of pixels 100 (specifically, thenormal pixel 100 x and the phase difference detection pixels 100 a and100 b) so as to be connected to each other. In contrast, the lowerelectrode 304 x is provided separately in units of normal pixels 100 x.In addition, the lower electrode 304 x is electrically connected to theplug 20 described above by a wire 402 formed of tungsten, aluminum,copper, or the like that penetrates the transparent insulating film 400.

As illustrated in FIG. 2 , a high refractive index layer 500 formed ofan inorganic film such as a silicon nitride film (SiN), a siliconoxynitride film (SiON), or silicon carbide (SiC) is provided on theupper electrode 302. Furthermore, an on-chip lens (lens unit) 502 isprovided on the high refractive index layer 500. The on-chip lens 502can be formed of, for example, a silicon nitride film (SiN) or a resinmaterial such as a styrene resin, an acrylic resin, a styrene-acryliccopolymer resin, or a siloxane resin.

As described above, the normal pixel 100 x included in the solid-stateimaging device 1 according to an embodiment of the present disclosurehas a stacked structure in which the PDs 200, 202, and 204 correspondingto three colors of light are stacked. That is, the solid-state imagingdevice 1 described above can be defined as a vertical spectral typesolid-state imaging device that performs photoelectric conversion on thegreen light by the photoelectric conversion film 300 (PD 200) formedabove the semiconductor substrate 10, and that performs photoelectricconversion on the blue and red light respectively by the PD 202 and PD204 in the semiconductor substrate 10.

The above-described photoelectric conversion film 300 can be formed ofeither an organic material (organic photoelectric conversion film) or aninorganic material (indefinite period photoelectric conversion film).For example, in formation of the photoelectric conversion film 300 froman organic material, it is possible to select one from four modes: (a)P-type organic semiconductor material, (b) N-type organic semiconductormaterial, (c) a stacked structure using at least two out of P-typeorganic semiconductor material layer, N-type organic semiconductormaterial layer, or a mixed layer (bulk heterostructure) of a P-typeorganic semiconductor material and an N-type organic semiconductormaterial, and (d) a mixed layer of a P-type organic semiconductormaterial and an N-type organic semiconductor material.

Specifically, examples of the P-type organic semiconductor materialinclude naphthalene derivative, anthracene derivative, phenanthrenederivative, pyrene derivative, perylene derivative, tetracenederivative, pentacene derivative, quinacridone derivative, thiophenederivative, thienothiophene derivative, benzothiophene derivative,benzothienobenzothiophene derivatives, triallylamine derivatives,carbazole derivatives, perylene derivatives, picene derivatives,chrysene derivatives, fluoranthene derivatives, phthalocyaninederivatives, subphthalocyanine derivatives, subporphyrazine derivatives,metal complexes with heterocyclic compounds as ligands, polythiophenederivatives, poly(benzothiadiazoles) derivatives, and polyfluorenederivatives.

In addition, examples of N-type organic semiconductor materials includefullerenes and fullerene derivatives (for example, fullerenes such asC60, C70, and C74 (higher fullerenes, endohedral fullerenes, etc.) orfullerene derivatives (for example, fullerene fluoride orPhenyl-C₆₁-Butyric Acid Methyl Ester (PCBM), Fullerene compounds,fullerene multimers, etc.)), organic semiconductor having HighestOccupied Molecular Orbital (HOMO) and Lowest Unoccupied MolecularOrbital (LUMO) deeper than P-type organic semiconductor, or transparentinorganic metal oxide. More specific examples of the N-type organicsemiconductor material include a heterocyclic compound containing anitrogen atom, an oxygen atom, or a sulfur atom, for example, an organicmolecules including a pyridine derivative, a pyrazine derivative, apyrimidine derivative, a triazine derivative, a quinoline derivative, aquinoxaline derivative, an isoquinoline derivative, acridinederivatives, phenazine derivatives, phenanthroline derivatives,tetrazole derivatives, pyrazole derivatives, imidazole derivatives,thiazole derivatives, oxazole derivatives, imidazole derivatives,benzimidazole derivatives, benzotriazole derivatives, benzoxazolederivatives, benzoxazole derivatives, carbazole derivatives, benzofuranderivatives, dibenzofuran derivatives, subporphyrazine derivatives,polyphenylene vinylene derivatives, polybenzothiadiazole derivatives,polyfluorene derivatives, or the like, as a part of molecular skeleton,organometallic complexes, and subphthalocyanine derivatives. Inaddition, examples of a group contained in the fullerene derivativeinclude a branched or cyclic alkyl group or a phenyl group; a grouphaving a linear or condensed aromatic compound; a group having a halide;a partial fluoroalkyl group; a perfluoroalkyl group; silylalkyl group;silylalkoxy group; arylsilyl group; arylsulfanyl group; alkylsulfanylgroup; arylsulfonyl group; alkylsulfonyl group; arylsulfide group;alkylsulfide group; amino group; alkylamino group; arylamino group;hydroxy group; alkoxy group; acylamino group; acyloxy group; carbonylgroup; carboxy group; carboxamide group; carboalkoxy group; acyl group;sulfonyl group; cyano group; nitro group; a group having chalcogenide;phosphine group; phosphone group; or derivatives of these. Note that thethickness of the photoelectric conversion film 300 formed of an organicmaterial is not limited, but may be, for example, 1×10⁻⁸ m to 5×10⁻⁷ m,preferably 2.5×10⁻⁸ m to 3×10⁻⁷ m, more preferably 2.5×10⁻⁸ m to 2×10⁻⁷m. In the above description, organic semiconductor materials areclassified into P-type and N-type, in which P-type means that holes areeasily transported, and N-type means that electrons are easilytransported. That is, in the organic semiconductor material, the typesare not be limited to the interpretation of having holes or electrons asmajority carriers for thermal excitation, unlike the case of inorganicsemiconductor materials.

More specifically, in order to function as the photoelectric conversionfilm 300 of the PD 200 that receives green light and performsphotoelectric conversion, the photoelectric conversion film 300 mayinclude a rhodamine dye, a melocyanine dye, a quinacridone derivative, asubphthalocyanine dye (subphthalocyanine derivatives), or the like.

Furthermore, when the photoelectric conversion film 300 is formed froman inorganic material, examples of the inorganic semiconductor materialinclude crystalline silicon, amorphous silicon, microcrystallinesilicon, crystalline selenium, amorphous selenium, and chalcopyritecompound such as CIGS(CuInGaSe), CIS(CuInSe₂), CuInS₂, CuAlS₂, CuAlSe₂,CuGaS₂, CuGaSe₂, AgAlS₂, AgAlSe₂, AgInS₂, AgInSe₂, or III-V groupcompounds such as GaAs, InP, AlGaAs, InGaP, AIGaInP, InGaAsP, and othercompound semiconductors such as CdSe, CdS, In₂Se₃, In₂S₃, Bi₂Se₃, Bi₂S₃,ZnSe, ZnS, PbSe, or PbS. In addition, quantum dots formed of thesematerials can be used as the photoelectric conversion film 300.

In the embodiment of the present disclosure, the normal pixel 100 x ofthe solid-state imaging device 1 is not limited to the structure inwhich the PD 200 having the photoelectric conversion film 300 providedabove the semiconductor substrate 10 and the PD 202 and PD 204 providedin the semiconductor substrate 10 are stacked. For example, in thepresent embodiment, the normal pixel 100 x of the solid-state imagingdevice 1 may have a structure in which a PD 200 having a photoelectricconversion film 300 provided above the semiconductor substrate 10 and aPD 202 provided in the semiconductor substrate 10 are stacked, that is,a structure including stacked two PDs, namely, PD 200 and PD 202. In thepresent embodiment, the normal pixel 100 x of the solid-state imagingdevice 1 may have a structure having three PDs 200, 202, and 204 stackedabove the semiconductor substrate 10. In such a case, each of the PDs200, 202, and 204 may have a photoelectric conversion film 300, and thephotoelectric conversion film 300 may be formed of an organicsemiconductor material. At this time, in order to function as thephotoelectric conversion film 300 of the PD 202 that receives blue lightand performs photoelectric conversion, the photoelectric conversion film300 may include a coumaric acid dyes, tris-8-hydroxyquinolinium (Alq₃),merocyanine-based dyes, for example. In addition, in order to functionas the photoelectric conversion film 300 of the PD 204 that receives redlight and performs photoelectric conversion, the photoelectricconversion film 300 may include phthalocyanine dyes, subphthalocyaninedyes (subphthalocyanine derivatives), or the like.

3. BACKGROUND OF EMBODIMENTS OF THE PRESENT DISCLOSURE ON THE SIDE OFTHE INVENTORS

Next, before describing the details of individual embodiments accordingto the present disclosure, a background of embodiments of the presentdisclosure on the side of the inventors will be described.

As described above, an imaging apparatus has adopted a method ofdetecting a phase difference using a pair of phase difference detectionpixels having asymmetric sensitivity with respect to an incident angleof light, as an autofocus function. For example, in Patent Literature 1described below, a light shielding film is partially provided toimplement a phase difference detection pixel having a sensitivity thatis asymmetric with respect to the incident angle of light.Alternatively, in Patent Literature 1 described above, the area of alower electrode is set to half the area of the lower electrode of anormal pixel that generates a signal for image generation, and the lowerelectrode is disposed unevenly within the phase difference detectionpixel formation region, and thereby achieves the phase differencedetection pixel having asymmetric sensitivity with respect to theincident angle.

However, in the technology disclosed in Patent Literature 1, a lightshielding film is provided so as to cover a part of the phase differencedetection pixel to block light, and thus, the light incident on thepixel is not sufficiently utilized. Therefore, the solid-state imagingdevice according to Patent Literature 1 has a limitation in improvingthe light detection sensitivity. Furthermore, when the light shieldingfilm is provided, there is a possibility that light travels in anunintended optical path due to reflection on the shielding film to causethe light to be incident on the surrounding pixels, resulting in colormixing.

In the technology disclosed in Patent Literature 1, a charge unnecessaryfor phase difference detection might be generated in detecting the phasedifference, depending on the shape of the lower electrode of the phasedifference detection pixel. In such a case, at the time of phasedifference detection, the unnecessary charge might leak to the lowerelectrode, leading to a failure in achieving a sufficient separationratio or occurrence of noise or afterimages. In other words, thetechnology has had a limit in improving the detection sensitivity of thephase difference. In order to improve the detection sensitivity of thephase difference, it is conceivable to provide a mechanism (such as aplug) for discharging the unnecessary charge in the phase detectionpixel. However, in a case where a discharge mechanism is provided, it isnecessary to ensure a certain area in order to provide the mechanism,and thus there has been a limitation in miniaturization of thesolid-state imaging device.

Therefore, in view of such a situation, the present inventors haveconceived embodiments according to the present disclosure that makes itpossible to improve detection sensitivity while enabling miniaturizationof pixels. Specifically, according to the embodiments of the presentdisclosure, the lower electrode of the adjacent pixel 100 c adjacent tothe phase difference detection pixels 100 a and 100 b is provided acrossthe section where the phase difference detection pixels 100 a and 100 bare provided, making it possible to improve detection sensitivity whileenabling miniaturization of pixels. Details of the embodiments accordingto the present disclosure will be sequentially described below.

4. FIRST EMBODIMENT 4.1 Detailed Configuration of Solid-State ImagingDevice

First, a detailed configuration of the phase difference detection pixel100 a and the adjacent pixel 100 c according to a first embodiment ofthe present disclosure will be described with reference to FIGS. 3 and 4. FIG. 3 is a view illustrating a cross-sectional configuration exampleof the phase difference detection pixel 100 a and the adjacent pixel 100c according to the present embodiment. In detail, FIG. 3 corresponds toa cross section obtained by cutting the pixels arranged in the pixelarray unit 30, namely, the normal pixels 100 x, the phase differencedetection pixels 100 a, the adjacent pixel 100 c, and the normal pixels100 x arranged from the left in this order, in the thickness directionof the semiconductor substrate 10. FIG. 4 is a view illustrating aplanar configuration example of the pixel array unit 30 according to thepresent embodiment, and specifically illustrates a partial plane of thepixel array unit 30. In FIG. 4 , a rectangular region surrounded by abroken line indicates a basic range of a section 600 that forms onepixel. More specifically, each of the sections 600 corresponds to eachof on-chip lenses 502 located above the semiconductor substrate 10.Accordingly, the stacked PD 202 and PD 204 are also provided for each ofpixels. Furthermore, to facilitate understanding, FIG. 4 omitsillustration of layers located above the lower electrode 304, such asthe upper electrode 302 and the photoelectric conversion film 300. Theplanar configuration example illustrated in FIG. 4 may be a centralregion of the pixel array unit 30 or an outer edge portion of the pixelarray unit 30.

In the following description, the adjacent pixel 100 c is a pixelprovided adjacent to each of the phase difference detection pixels 100 aand 100 b. Accordingly, one adjacent pixel 100 c exists corresponding toeach of the phase difference detection pixels 100 a and 100 b.

As illustrated in FIG. 3 , the phase difference detection pixel 100 aand the adjacent pixel 100 c have a stacked structure substantiallysimilar to the normal pixel 100 x described above, except for thedifference of the shape of the lower electrodes 304 a and 304 c from theshape of the normal pixel 100 x. Specifically, as described above, thelower electrode 304 x in the normal pixel 100 x is provided in units ofthe normal pixel 100 x. In contrast, the lower electrode 304 c of theadjacent pixel 100 c is provided across from the pixel formation regionof the adjacent pixel 100 c to the pixel formation region (section 600)of the adjacent phase difference detection pixel 100 a. Furthermore, thelower electrode 304 a of the phase difference detection pixel 100 a isprovided on the left side of the pixel formation region (section 600) ofthe phase difference detection pixel 100 a. The lower electrodes 304 aand 304 c are electrically connected to the charge storage unit 24provided on the semiconductor substrate 10 via the plug 20 or the like,similarly to the lower electrode 304 x of the normal pixel 100 x.

In FIG. 3 , for the sake of convenience, the normal pixel 100 x, thephase difference detection pixel 100 a, the adjacent pixel 100 c, andthe normal pixel 100 x are arranged in this order from the left side inthe drawing. However, there is no limitation, in the present embodiment,to such an example, and the arrangement in the pixel array unit 30 canbe selected in any manner.

Furthermore, as illustrated in FIG. 4 , the pixel array unit 30 includesthe phase difference detection pixel 100 a and the adjacent pixel 100 carranged adjacent to each other in the horizontal direction (left-rightdirection in the drawing). Furthermore, in the phase differencedetection pixel 100 b paired with the phase difference detection pixel100 a, the lower electrode 304 b is arranged within a light receivingsurface (section 600) of the phase difference detection pixel 100 b soas to be left-right symmetric to the lower electrode 304 a of the phasedifference detection pixel 100 a. The adjacent pixel 100 c correspondingto the phase difference detection pixel 100 b is arranged so as to beadjacent to the phase difference detection pixel 100 b in the horizontaldirection. Furthermore, as illustrated in FIG. 4 , the phase differencedetection pixel 100 a and the adjacent pixel 100 c adjacent to the phasedifference detection pixel 100 a are arranged in line with the phasedifference detection pixel 100 b and the adjacent pixel 100 c adjacentto the phase difference detection pixel 100 b, in the vertical direction(up-down direction in the drawing) across the two normal pixels 100 x.In FIG. 4 , the phase difference detection pixels 100 a and 100 b, orthe like, are provided across the two normal pixels 100 x. However,there is no limitation, in the present embodiment, to two normal pixels100 x, and the pixels may be arranged across a single, or two or morenormal pixels 100 x.

In other words, in the present embodiment, the lower electrodes 304 aand 304 b are provided at positions shifted to the left or right in thelight receiving surfaces of the phase difference detection pixels 100 aand 100 b, so as to form the phase difference detection pixels 100 a and100 b to have asymmetric sensitivity with respect to the incident angleof green light 800. In FIG. 4 , the pair of phase difference detectionpixels 100 a and 100 b has the lower electrodes 304 a and 304 brespectively at positions that are left-right symmetric with respect toeach other, leading to high sensitivity to phase difference detection inthe horizontal direction. Details of the phase difference detectionmethod by the phase difference detection pixels 100 a and 100 b will bedescribed below.

Here, the light receiving surface represents a surface of each of pixelson which the PDs 200, 202, and 204 stacked in the normal pixel 100 x andthe phase difference detection pixels 100 a and 100 b receive light whenviewed from above the semiconductor substrate 10. More specifically, thelight receiving surface corresponds to the section (pixel formationregion) 600 surrounded by a broken line in the plan view of FIG. 4 .

As illustrated in FIG. 4 , regarding the normal pixel 100 x, asdescribed above, the rectangular lower electrode 304 x is providedseparately for each of the sections 600 in which the normal pixel 100 xis provided. That is, the lower electrode 304 x is provided separatelyfor each of pixels. Furthermore, for the phase difference detectionpixels 100 a and 100 b, the rectangular lower electrodes 304 a and 304 bare provided so as to cover only the right side portion or the left sideportion of the section 600 where the phase difference detection pixels100 a and 100 b are provided. In other words, the lower electrodes ofthe phase difference detection pixels 100 a and 100 b can be regarded asone piece of two divided lower electrodes 304 x of the normal pixel 100x. Furthermore, in the adjacent pixel 100 c, the rectangular lowerelectrode 304 c is provided to cover from the section 600 including theadjacent pixel 100 c up to the section 600 including the phasedifference detection pixels 100 a and 100 b adjacent to the adjacentpixel 100 c when viewed from above the semiconductor substrate 10. Inother words, the lower electrode 304 c of the adjacent pixel 100 c canbe regarded as a combination of the lower electrode 304 x of the normalpixel 100 x and one piece of the two divided lower electrodes 304 x.

As illustrated in FIG. 4 , the lower electrodes 304 a and 304 b of thephase difference detection pixels 100 a and 100 b and the lowerelectrode 304 c of the adjacent pixel 100 c adjacent to the phasedifference detection pixels 100 a and 100 b are preferably located,viewed from above the semiconductor substrate 10, at positions symmetricwith each other with respect to an optical axis 52 of the on-chip lens502 of the section in which the phase difference detection pixels 100 aand 100 b are provided. With a configuration in which the lowerelectrodes 304 a, 304 b, and 304 c are symmetric with each other withrespect to the optical axis 52 in this manner, the lower electrodes 304a and 304 b each have a shape corresponding to the incident direction oflight. This makes it possible to collect light further efficiently andimprove the detection sensitivity in detecting the phase difference.

In addition, it is preferable, in the pixel array unit 30, to provide alarge number of normal pixels 100 x in order to increase the resolutionof the captured image. However, when the number of phase differencedetection pixels 100 a and 100 b is small, the accuracy and speed offocus would be degraded. Therefore, it is preferable to appropriatelyselect the number of phase difference detection pixels 100 a and 100 bprovided in the pixel array unit 30, their formation positions, or thelike, in consideration of the balance between the resolution and thefocus accuracy.

4.2 Detection Method of Phase Difference

Next, a method for detecting a phase difference in the solid-stateimaging device 1 according to the first embodiment will be describedwith reference to FIG. 5 . FIG. 5 is a graph illustrating signal output(sensitivity), with respect to the incident angle of light, of the PD200 of the pair of phase difference detection pixels 100 a and 100 baccording to the present embodiment. Note that the incident angle with anegative sign in FIG. 5 represents that incident light is incidentdiagonally from the left side in the drawing with respect to the opticalaxis 52 of the on-chip lens 502 provided in the phase differencedetection pixels 100 a and 100 b illustrated in FIG. 4 . In contrast,the incident angle with a positive sign represents that incident lightis incident diagonally from the right side in the drawing with respectto the optical axis 52 of the on-chip lens 502 provided in theabove-described phase difference detection pixels 100 a and 100 b.

In one of the pixels, that is, the phase difference detection pixel 100a, it is possible to acquire an output signal that has beenphotoelectrically converted by the photoelectric conversion film 300 onthe left side in the section 600, that is, photoelectrically convertedon the left side of the PD 200. As a result, the PD 200 of the phasedifference detection pixel 100 a exhibits an output tendency withrespect to the incident angle as indicated by PSa in FIG. 5 .Specifically, in a case where the PD 200 of the phase differencedetection pixel 100 a receives light incident from the left side (lightwhose incident angle is indicated by a negative sign) with respect tothe optical axis 52 of the on-chip lens 502 provided in the phasedifference detection pixel 100 a, the PD 200 outputs a low signal, oroutputs no signal. In contrast, in a case where the PD 200 of the phasedifference detection pixel 100 a receives light incident from the rightside with respect to the optical axis (light whose incident angle isindicated by positive sign), the PD 200 outputs a high signal. That is,the PD 200 of the phase difference detection pixel 100 a has a signaloutput tendency (sensitivity) that is asymmetric with respect to a Yaxis (optical axis 52) where the incident angle is 0 degrees.

The other pixel, namely, the phase difference detection pixel 100 b canacquire a signal that has been photoelectrically converted by the rightphotoelectric conversion film 300 in the section 600, that is, a signalthat has been photoelectrically converted by the right side of the PD200. As a result, the PD 200 of the phase difference detection pixel 100b exhibits an output tendency with respect to the incident angle asindicated by PSb in FIG. 5 . Specifically, in a case where the PD 200 ofthe phase difference detection pixel 100 b receives light incident fromthe right side (light whose incident angle is indicated by positivesign) with respect to the optical axis 52 of the on-chip lens 502provided in the phase difference detection pixel 100 b, the PD 200outputs a low signal, or outputs no signal. In contrast, in a case wherethe PD 200 of the phase difference detection pixel 100 b receives lightincident from the left side with respect to the optical axis (lightwhose incident angle is indicated by a negative sign), the PD 200outputs a high signal. That is, the PD 200 of the phase differencedetection pixel 100 b, similarly to the phase difference detection pixel100 a, exhibits a signal output tendency (sensitivity) that isasymmetric with respect to the Y axis (optical axis 52) where theincident angle is 0 degrees.

As described above, the PD 200 of the phase difference detection pixels100 a and 100 b has a signal output tendency (sensitivity) havingasymmetry with respect to the incident angle of light. That is, the pairof phase difference detection pixels 100 a and 100 b has a tendency tooutput signals symmetric to each other with respect to the Y axis(optical axis 52) having an incident angle of 0 degrees as illustratedin FIG. 5 . In this manner, the pair of phase difference detectionpixels 100 a and 100 b has mutually different sensitivities with respectto the incident angle of light, leading to an occurrence of a shift(phase difference) in a detected image. Therefore, in the presentembodiment, it is possible to detect such a difference (phasedifference) between the output signals as a difference signal by adetection unit (not illustrated) of the output circuit unit 38, forexample. In the present embodiment, the defocus amount is calculated onthe basis of the detected phase difference, and an image forming lens(not illustrated) is adjusted (moved), thereby achieving autofocus.

While the above description is an example in which the phase differenceis detected as a difference between the output signals of the phasedifference detection pixels 100 a and 100 b, the present embodiment isnot limited to this, for example, and the phase difference may bedetected as a ratio of the output signals of the phase differencedetection pixels 100 a and 100 b.

Meanwhile, in one phase difference detection pixel 100 a, the chargephotoelectrically converted by the photoelectric conversion film 300 onthe right side of the section 600 of the phase difference detectionpixel 100 a is unnecessary when detecting the above-described phasedifference. Furthermore, in the other phase difference detection pixel100 b, the charge photoelectrically converted by the photoelectricconversion film 300 on the left side of the section 600 of the phasedifference detection pixel 100 b is unnecessary when detecting theabove-described phase difference. Accordingly, in the presentembodiment, such unnecessary charges can be extracted as signals via thelower electrode 304 c of the adjacent pixel 100 c, provided across thesections of the phase difference detection pixels 100 a and 100 b. Forexample, the above-described unnecessary charges can be extracted to thecharge storage unit 24 electrically connected to the lower electrode 304c via the plug 20. As a result, in the present embodiment, it ispossible to avoid mixture of unnecessary charges to the lower electrodes304 a and 304 b of the phase difference detection pixels 100 a and 100 bat the time of phase calculation. This means it is possible to avoidoccurrence of failure in achieving a sufficient separation ratio, oroccurrence of noise or afterimage, leading to improvement of phasedifference detection accuracy.

Furthermore, in the present embodiment, unnecessary charges extractedvia the lower electrode 304 c of the adjacent pixel 100 c, together withcharges photoelectrically converted by the photoelectric conversion film300 in the section 600 of the adjacent pixel 100 c, may be utilized assignals for image generation. That is, while the PD 200 of the adjacentpixel 100 c includes the lower electrode 304 c provided across from thesection 600 where the adjacent pixel 100 c is provided up to the section600 where the phase difference detection pixels 100 a and 100 b adjacentto the adjacent pixel 100 c are provided unlike the normal pixel 100 x,it is possible to function similarly to the normal pixel 100 x.Therefore, according to the present embodiment, even if there is acharge unnecessary for phase difference detection generated byphotoelectric conversion in the photoelectric conversion film 300 on theright side or the left side of the section 600 of the phase differencedetection pixels 100 a and 100 b, it is possible to use the charge as animage generation signal. As a result, according to the presentembodiment, the light incident on the section 600 of the phasedifference detection pixels 100 a and 100 b can be fully utilized,leading to further improvement of the light detection sensitivity of thesolid-state imaging device 1.

Moreover, according to the present embodiment, it is not necessary tonewly provide a mechanism such as a plug for discharging an unnecessarycharge as described above, making it possible to achieve miniaturizationof the solid-state imaging device 1.

Furthermore, in the present embodiment, since no light shielding film isprovided on the phase difference detection pixels 100 a and 100 b, it ispossible to use the PD 202 and PD 204 positioned below similarly to thePD 202 and PD 204 of the normal pixel 100 x. This makes it possible tofurther improve the light detection sensitivity of the solid-stateimaging device 1. Furthermore, the configuration according to thepresent embodiment includes no light shielding film. Accordingly, thereis no possibility that an unnecessary charge generated by the incidentlight due to the reflection of the light shielding film would leak toand have an adverse effect on the peripheral pixels 100.

4.3 Modifications

Next, first to fourth modifications of the present embodiment will bedescribed with reference to FIGS. 6 to 9 , respectively. FIGS. 6 to 9are views illustrating planar configuration examples of the pixel arrayunit 30 according to the first to fourth modifications of the presentembodiment, and specifically illustrate a partial plane of the pixelarray unit 30. Furthermore, similarly to FIG. 4 , to facilitateunderstanding, FIGS. 6 to 9 omit illustration of layers located abovethe lower electrode 304, such as the upper electrode 302 and thephotoelectric conversion film 300. The planar configuration examplesillustrated in FIGS. 6 to 9 may be a central portion of the pixel arrayunit 30 or an outer edge portion of the pixel array unit 30.

First Modification

In the first embodiment described above, the phase difference detectionpixel 100 a and the phase difference detection pixel 100 b are providedadjacent to each other via the normal pixel 100 x. However, theembodiment of the present disclosure is not limited to the configurationin which the phase difference detection pixel 100 a and the phasedifference detection pixel 100 b are provided to be adjacent to eachother via the normal pixel 100 x as described above, and may be providedadjacent to each other on the pixel array unit 30.

Specifically, as illustrated in FIG. 6 , the phase difference detectionpixel 100 a and the adjacent pixel 100 c adjacent to the phasedifference detection pixel 100 a are arranged in line with the phasedifference detection pixel 100 b and the adjacent pixel 100 c adjacentto the phase difference detection pixel 100 b, in the vertical direction(up-down direction in the drawing). In other words, the phase differencedetection pixel 100 b is arranged at a position that is symmetric withrespect to the phase difference detection pixel 100 a about the centerpoint 50 of the pixel array unit 30 in FIG. 6 as the center of symmetry.Furthermore, in the present modification, as illustrated in FIG. 6 , thelower electrode 304 c of the adjacent pixel 100 c may be provided so asto extend from the section 600 including the adjacent pixel 100 c beyondthe optical axis 52 of the on-chip lens 502 in the section 600 includingthe phase difference detection pixels 100 a and 100 b adjacent to theadjacent pixel 100 c when viewed from above the semiconductor substrate10. In this manner, with the configuration in which the lower electrode304 c is provided so as to extend beyond the optical axis 52, it ispossible, when the adjacent pixel 100 c is used as the normal pixel 100that generates a signal for image generation, to further improve thelight detection sensitivity on the PD 200 of the adjacent pixel 100 c,compared with the above-described first embodiment illustrated in FIG. 4. Note that the optical axis 52 described above is located at the centerof the on-chip lens 502, that is, located at the center of the section600.

Second Modification

In the first embodiment and the first modification described above, thelower electrode 304 a of the phase difference detection pixel 100 a andthe lower electrode 304 c of the adjacent pixel 100 c are arranged sideby side in the horizontal direction (left-right direction in thedrawing). However, the arrangement in the embodiment of the presentdisclosure is not limited to such an arrangement. For example, the lowerelectrode 304 a and the lower electrode 304 c may be arranged side byside in the vertical direction (up-down direction in the drawing).Specifically, as illustrated in FIG. 7 , each of the lower electrodes304 a and 304 b of the phase difference detection pixels 100 a and 100 band the lower electrode 304 c of the adjacent pixel 100 c are arrangedside by side in the vertical direction (up-down direction in thedrawing). In FIG. 5 , the pair of phase difference detection pixels 100a and 100 b has the lower electrodes 304 a and 304 b respectively atpositions that are up-down symmetric with respect to each other, leadingto high sensitivity to phase difference detection in the verticaldirection.

Third Modification

In the description of the first embodiment and its first and secondmodifications described above, each of the lower electrodes 304 a, 304b, and 304 c has a rectangular shape. However, the shape is not limitedto such a shape in the embodiment of the present disclosure. Forexample, the lower electrodes 304 a and 304 b of the phase differencedetection pixels 100 a and 100 b may be provided in a triangular shapewhen viewed from above the semiconductor substrate 10. The lowerelectrode 304 c of the adjacent pixel 100 c may be provided in atrapezoidal shape when viewed from above the semiconductor substrate 10.Specifically, as illustrated in FIG. 8 , the phase difference detectionpixels 100 a and 100 b may have the lower electrodes 304 a and 304 brespectively having a triangular shape, such as a shape obtained bydividing the lower electrode 304 x along a diagonal line of the section600 including these pixels. While the lower electrodes 304 a and 304 billustrated in FIG. 8 have the shape of an isosceles right triangle, theshape in the embodiment of the present disclosure is not limited to sucha triangle, and may be other triangles. In the adjacent pixel 100 cadjacent to the phase difference detection pixels 100 a and 100 b, thelower electrode 304 c is formed so as to cover the section 600 of thephase difference detection pixels 100 a and 100 b, and having atrapezoidal shape as a whole. Specifically, in the section 600 of thephase difference detection pixels 100 a and 100 b, the lower electrodes304 a and 304 b and the lower electrode 304 c are symmetric about theoptical axis 52 of the on-chip lens 502 provided in the section 600.

That is, in the embodiment of the present disclosure, the lowerelectrodes 304 a and 304 b and the lower electrode 304 c are preferablyprovided in the section 600 including the phase difference detectionpixels 100 a and 100 b so as to be symmetric about the optical axis 52of the on-chip lens 502 provided in the section 600. In other words, thelower electrodes 304 a and 304 b and the lower electrode 304 c arepreferably provided so as to be symmetric with each other with respectto the incident direction of light incident on the section 600, in thesection 600 including the phase difference detection pixels 100 a and100 b. In this manner, with the configuration in which the lowerelectrodes 304 a and 304 b are provided corresponding to the incidentdirection of light, it is possible to collect the incident light moreefficiently and improve the detection sensitivity in detecting the phasedifference. For example, in the section 600 where light is incidentdiagonally, it is preferable to provide the lower electrodes 304 a and304 b as triangular lower electrodes provided along lines that dividethe section 600 diagonally as illustrated in FIG. 8 .

Fourth Modification

In the embodiment of the present disclosure, the lower electrodes 304 a,304 b, and 304 c having the forms illustrated as the first embodimentand the second and third modifications may be provided mixed with eachother in one pixel array unit 30. Specifically, as illustrated in FIG. 9, in the peripheral region of the pixel array unit 30, in other words,at the four corners of the pixel array unit 30, there are provided thephase difference detection pixels 100 a and 100 b and the adjacentpixels 100 c having the triangular and trapezoidal lower electrodes 304a, 304 b, and 304 c according to the above-described third modification.In addition, the central region of the pixel array unit includes thephase difference detection pixels 100 a and 100 b and the adjacentpixels 100 c having the rectangular lower electrodes 304 a, 304 b, and304 c according to the first embodiment and the second modificationdescribed above. Incident directions of light incident on the section600 including each of pixels 100 are different corresponding to thepositions in the pixel array unit 30. Accordingly, in the peripheralregion of the pixel array unit 30 where light is incident diagonally,the lower electrodes 304 a, 304 b, and 304 c are provided in triangularshapes so as to be symmetric with each other with respect to theincident direction in the section 600 of the phase difference detectionpixels 100 a and 100 b. In contrast, in the central region of the pixelarray unit 30 where light is incident perpendicularly, the lowerelectrodes 304 a, 304 b, are 304 c are provided in rectangular shapes soas to be symmetric with each other with respect to the incidentdirection in the section 600 of the phase difference detection pixels100 a and 100 b. In this manner, the shapes of the lower electrodes 304a, 304 b, and 304 c vary, in the present modification, in accordancewith the incident direction. This makes it possible to collect incidentlight further efficiently, leading to improvement of phase differencedetection accuracy.

Fifth Modification

In the first embodiment and the first to fourth modifications describedso far, the area of the lower electrode 304 c of the adjacent pixel 100c is increased, leading to achievement of higher sensitivity to light inthe PD 200 of the adjacent pixel 100 c, than that of the normal pixel100 x. That is, since the light conversion efficiency of the adjacentpixel 100 c is higher than that of the normal pixel 100 x, the adjacentpixel 100 c is required to generate a signal for image generation byperforming correction processing on the portion obtained by the higherconversion efficiency. In the present modification, in order to avoidsuch correction processing, a capacitance (capacitor) (not illustrated)is provided between each of the lower electrode 304 a, 304 b, and 304 cand the charge storage unit 24, and the capacitance is provided so as toset the capacitance connected to the lower electrode 304 c of theadjacent pixel 100 c greater than the capacitance connected to the lowerelectrode 304 c of the normal pixel 100 x. With this configuration, thecharge (output signal) stored in the charge storage unit 24 can becorrected due to the difference in the magnitude of the connectedcapacitance, making it possible to adjust the adjacent pixel 100 c to bea pixel equivalent to the normal pixel 100 x. That is, the apparentconversion efficiency of the adjacent pixel 100 c can be reduced to thelevel equivalent to the level of the normal pixel 100 x. Therefore,according to the present modification, it is possible, in the adjacentpixel 100 c, to generate a signal for image generation withoutperforming the above-described correction processing when generating asignal.

5. SECOND EMBODIMENT

In the embodiment of the present disclosure, it is allowable to providean additional electrode 308 between the lower electrodes 304 a and 304 bof the phase difference detection pixels 100 a and 100 b and the lowerelectrode 304 c of the adjacent pixel 100 c in order to improve thephase difference detection accuracy. Hereinafter, a second embodiment inwhich such an additional electrode 308 is provided will be describedwith reference to FIGS. 10 and 11 . FIG. 10 is a view illustrating across-sectional configuration example of the phase difference detectionpixel and the adjacent pixels according to the present embodiment.Specifically, the cross section corresponds to a cross section obtainedby cutting the pixels arranged in the pixel array unit 30, namely, thenormal pixels 100 x, the phase difference detection pixels 100 a, theadjacent pixel 100 c, and the normal pixels 100 x arranged in thisorder, in the thickness direction of the semiconductor substrate 10.FIG. 11 is a view illustrating a planar configuration example of thepixel array unit 30 according to the present embodiment.

As illustrated in FIGS. 10 and 11 , in the present embodiment, theadditional electrode 308 having a predetermined pattern width isprovided between the lower electrodes 304 a and 304 b of the phasedifference detection pixels 100 a and 100 b and the lower electrode 304c of the adjacent pixel 100 c. Furthermore, in the present embodiment,the additional electrode 308 is similarly provided between the lowerelectrodes 304 a and 304 b of the phase difference detection pixels 100a and 100 b and the lower electrode 304 x of the normal pixel 100 x, andbetween the lower electrode 304 c of the adjacent pixel 100 c and thelower electrode 304 x of the normal pixel 100 x. The additionalelectrode 308 is electrically connected to wiring (not illustrated)provided around the pixel array unit 30, and is further electricallyconnected to a voltage application part (not illustrated) via thewiring, making it possible to supply a predetermined voltage to theadditional electrode 308. That is, the potential of the additionalelectrode 308 in the present embodiment can be fixed to a predeterminedpotential. As a result, the additional electrode 308 can blockcapacitive coupling between the charge storage unit 24 electricallyconnected to the lower electrodes 304 a and 304 b and the charge storageunit 24 electrically connected to the lower electrode 304 c. Therefore,according to the present embodiment, the potential of the charge storageunit 24 of the phase difference detection pixels 100 a and 100 b and thepotential of the charge storage unit 24 of the adjacent pixel 100 c arenot affected by each other, and can be maintained depending on thegenerated charges, making it possible to further improve the phasedifference detection accuracy.

In the present embodiment, the additional electrode 308 is preferablyprovided on the same plane as the lower electrodes 304 a, 304 b, and 304c. With this configuration, it is possible to improve the function ofblocking the above-described capacitive coupling by additional electrode308. Furthermore, since the additional electrode 308 is provided on thesame plane as the lower electrodes 304 a, 304 b, and 304 c, it ispossible to provide the photoelectric conversion film 300 on a flatsurface. This makes it possible to easily form higher-qualityphotoelectric conversion film 300. As a result, the photoelectricconversion characteristics of the photoelectric conversion film 300 canbe further improved. In contrast, in a case where the additionalelectrode 308 is not provided on the same plane as the lower electrode304 a, 304 b, or 304 c, the degree of freedom in layout is increasedwhile the function of blocking capacitive coupling is weakened. Thismakes it possible to achieve further miniaturization of the solid-stateimaging device 1.

6. THIRD EMBODIMENT 6.1 Detailed Configuration of Solid-State ImagingDevice

Furthermore, the solid-state imaging device 1 according to theembodiment of the present disclosure is not limited to a form in whichthe charge photoelectrically converted by the photoelectric conversionfilm 300 is temporarily held in the charge storage unit 24, and may havea form in which the charge is temporarily held in the photoelectricconversion film 300. Hereinafter, a third embodiment of the presentdisclosure as described above will be described with reference to FIG.12 . FIG. 12 is a view illustrating a cross-sectional configurationexample of the phase difference detection pixels 100 a and 100 baccording to the present embodiment. Specifically, the cross sectioncorresponds to a cross section obtained by cutting the pixels arrangedin the pixel array unit 30, namely, the phase difference detectionpixels 100 a, the normal pixel 100 x, and the phase difference detectionpixels 100 b arranged in this order, in the thickness direction of thesemiconductor substrate 10.

As illustrated in FIG. 12 , in the present embodiment, the lowerelectrode 304 x of the normal pixel 100 x and the lower electrodes 304 aand 304 b of the phase difference detection pixels 100 a and 100 b areeach divided into two. Specifically, the lower electrode 304 x of thenormal pixel 100 x is divided into a lower electrode 304 x-1 and a lowerelectrode 304 x-2. The lower electrodes 304 a and 304 b of the phasedifference detection pixels 100 a and 100 b are also divided into alower electrode 304 a-1 (304 b-1) and a lower electrode 304 a-2 (304b-2). Furthermore, the lower electrodes 304 x-2 and 304 a-2 face thephotoelectric conversion film 300 across the insulating film 306.

Furthermore, in the normal pixel 100 x, wiring (not illustrated) isconnected to the lower electrode 304 x-2, and a desired potential isapplied to the lower electrode 304 x-2 using the wiring. Wiring (notillustrated) is also connected to the lower electrode 304 x-1, and adesired potential is applied to the lower electrode 304 x-1 using thewiring. Furthermore, the lower electrode 304 x-1 is connected to thecharge storage unit 24 provided on the semiconductor substrate 10 by theplug 20 or the like. In the present embodiment, controlling thepotential applied to the lower electrode 304 x-1 and the lower electrode304 x-2 makes it possible to store the charge generated in thephotoelectric conversion film 300 in the photoelectric conversion film300 or possible to extract the charge to the charge storage unit 24. Inother words, the lower electrode 304 x-2 can function as a chargestorage electrode for attracting the charge generated in thephotoelectric conversion film 300 in accordance with the appliedpotential and storing the charges in the photoelectric conversion film300.

Furthermore, the lower electrodes 304 a-1 and 304 a-2 of the phasedifference detection pixels 100 a and 100 b and the lower electrode 304c of the adjacent pixel 100 c are connected to wiring (not illustrated)similarly to the lower electrode 304 x-2 described above, and thus, adesired potential is applied to these electrodes using the wiring.Accordingly, the lower electrode 304 a-2 of the phase differencedetection pixels 100 a and 100 b and the lower electrode 304 c of theadjacent pixel 100 c can also function as a charge storage electrode forstoring the charge in the photoelectric conversion film 300 similarly tothe lower electrode 304 x-2 described above.

In this manner, it is possible to store or extract the charges in orfrom the photoelectric conversion film 300 in accordance with thepotential applied to the lower electrode 304. This makes it possible, inthe present embodiment, to provide the charge storage unit 24 to beshared by a plurality of pixels, rather than providing the chargestorage unit 24 for each of pixels. Therefore, in the presentembodiment, it is possible to suppress the increase in the number ofcharge storage units 24 and plugs 20 connected to the charge storageunits 24, making it possible to achieve further miniaturization of thesolid-state imaging device 1.

6.2 Modification

Note that the additional electrode 308 of the second embodimentdescribed above may be applied to the present embodiment illustrated inFIG. 12 . Hereinafter, such a modification will be described withreference to FIG. 13 . FIG. 13 is a view illustrating a cross-sectionalconfiguration example of the phase difference detection pixel and theadjacent pixels according to the present modification. Specifically, thecross section corresponds to a cross section obtained by cutting thepixels arranged in the pixel array unit 30, namely, the normal pixels100 x, the phase difference detection pixels 100 a, the adjacent pixel100 c, and the normal pixels 100 x arranged in this order, in thethickness direction of the semiconductor substrate 10.

As illustrated in FIG. 13 , in comparison with the third embodimentillustrated in FIG. 12 , the present modification includes theadditional electrode 308 between the lower electrodes 304 a and 304 b ofthe phase difference detection pixels 100 a and 100 b and the lowerelectrode 304 c of the adjacent pixel 100 c. In the presentmodification, similarly to the second embodiment, the potential of theadditional electrode 308 is also fixed to a predetermined potential.Therefore, the additional electrode 308 can block capacitive couplingbetween the lower electrode 304 a-2 of the phase difference detectionpixel 100 a and the lower electrode 304 c of the adjacent pixel 100 c.As a result, in the present modification, the potential of the lowerelectrode 304 a-2 of the phase difference detection pixel 100 a and thepotential of the lower electrode 304 c of the adjacent pixel 100 c aremaintained at a desired potential without being affected by each other,making it possible to further improve the accuracy in phase differencedetection.

7. FOURTH EMBODIMENT

In the first embodiment described above, the phase difference detectionis performed by detecting the signal output difference or output ratioof the pair of phase difference detection pixels 100 a and 100 b.However, the embodiment of the present disclosure is not limited to thephase difference detection method as described above, and the phasedifference may be detected using another method. Accordingly, a methodfor detecting a phase difference using the adjacent pixel 100 c will bedescribed below with reference to FIGS. 14 to 17 as a fourth embodimentof the present disclosure. FIGS. 14 to 17 are views illustrating thefourth embodiment of the present disclosure. Specifically, FIGS. 14 and16 are views illustrating cross-sectional configuration examples of thephase difference detection pixel 100 a and the adjacent pixel 100 caccording to the first embodiment. Specifically, the cross sectionscorrespond to cross sections obtained by cutting the pixels arranged inthe pixel array unit 30, namely, the phase difference detection pixels100 a (100 b) and the adjacent pixel 100 c arranged in this order, inthe thickness direction of the semiconductor substrate 10. Furthermore,FIG. 15 is a graph illustrating signal outputs (sensitivities) of the PD200 of the phase difference detection pixel 100 a and the PD 200 of theadjacent pixel 100 c illustrated in FIG. 14 . Furthermore, FIG. 17 is agraph illustrating signal outputs (sensitivities) of the PD 200 of thephase difference detection pixel 100 b and the PD 200 of the adjacentpixel 100 c illustrated in FIG. 16 .

First, FIG. 14 illustrates a stacked structure of the phase differencedetection pixel (first phase difference detection pixel) 100 a and theadjacent pixel 100 c according to the first embodiment described above.Here, detailed description of the stacked structure will be omitted. Asobserved from FIG. 14 , the PD 200 of the phase difference detectionpixel 100 a has the lower electrode 304 a that covers the left half ofthe section 600 of the phase difference detection pixel 100 a. Asdescribed above, the PD 200 of the phase difference detection pixel 100a has asymmetry with respect to the incident angle of light indicated asthe output signal PSa in FIG. 15 . In contrast, the adjacent pixel 100 cadjacent to the phase difference detection pixel 100 a in FIG. 14generates a charge by light incident on the section 600 of the adjacentpixel 100 c and the right half of the section 600 of the phasedifference detection pixel 100 a, and thus, has asymmetry with respectto the incident angle of light illustrated as an output signal ESc inFIG. 15 . In other words, the output signal ESc of the adjacent pixel100 c generates a larger amount of charge than the phase differencedetection pixel 100 a, and thus, has a greater maximum output, andfurthermore, has its peak at a position symmetric to the peak of PSa ofthe phase difference detection pixel 100 a with respect to the Y axis(optical axis 52) at which the incident angle is 0 degrees. Therefore,the output signal PSa of the phase difference detection pixel 100 a andthe output signal ESc of the adjacent pixel 100 c adjacent to the phasedifference detection pixel 100 a have outputs of different tendencieswith respect to the incident angle of light, making it possible toobtain a difference between these signals. The difference between thesesignals is represented as a difference signal (first output difference)PDSa in FIG. 15 . As observed from FIG. 15 , the difference signal PDSahas a tendency to change more steeply with respect to the incidentangle, than the output signal PSa of the phase difference detectionpixel 100 a.

Similarly, FIG. 16 illustrates a stacked structure of the phasedifference detection pixel (second phase difference detection pixel) 100b and the adjacent pixel 100 c according to the first embodimentdescribed above. As observed from FIG. 16 , the PD 200 of the phasedifference detection pixel 100 b has the lower electrode 304 b thatcovers the right half of the section 600 of the phase differencedetection pixel 100 b. As described above, the PD of the phasedifference detection pixel 100 b has asymmetry with respect to theincident angle of light indicated as the output signal PSb in FIG. 17 .In contrast, the adjacent pixel 100 c adjacent to the phase differencedetection pixel 100 b in FIG. 16 generates a charge by light incident onthe section 600 of the adjacent pixel 100 c and the left half of thesection 600 of the phase difference detection pixel 100 b, and thus, hasasymmetry with respect to the incident angle of light illustrated as anoutput signal ESc in FIG. 17 . The difference between the two isrepresented as a difference signal (second output difference) PDSb inFIG. 17 . Similarly to the above, the difference signal PDSb that is adifference between the output signal PSb of the PD 200 of the phasedifference detection pixel 100 b and the output signal ESc of the PD 200of the adjacent pixel 100 c adjacent to the phase difference detectionpixel 100 b has a tendency to change more steeply with respect to theincident angle, than the output signal PSb of the phase differencedetection pixel 100 b.

In the present embodiment, the phase difference can be detected bycomparing the difference signal PDSa and the difference signal PDSbdescribed above and obtaining the difference between these. That is, inthe present embodiment, the phase difference is detected using thedifference signal PDSa and the difference signal PDSb instead of theoutput signals PSa and PSb used in detecting the phase difference in thefirst embodiment. Additionally, as described above, the differencesignal PDSa and the difference signal PDSb tend to change more steeplythan the incident angle, that is, the sensitivity is high with respectto the incident angle. Therefore, according to the present embodiment,it is possible to further improve the phase difference detectionaccuracy by using such difference signals PDSa and PDSb. In the presentembodiment, such difference signals PDSa and PDSb, and the differencebetween these signals, can be detected by a detection unit (notillustrated) of the output circuit unit 38, for example.

While the above has described a case where the difference between thedifference signal PDSa and the difference signal PDSb is detected as aphase difference, the present embodiment is not limited to this. Forexample, the phase difference may be detected by comparing thedifference signal PDSa and the difference signal PDSb and obtaining aratio of these.

8. FIFTH EMBODIMENT

The solid-state imaging device 1 according to the above-describedembodiment of the present disclosure is generally applicable toelectronic apparatuses using a solid-state imaging device as an imagecapturing part, such as an imaging apparatus including a digital stillcamera and a video camera, a mobile terminal device having an imagingfunction, a copying machine using a solid-state imaging device for animage reading part. Furthermore, the embodiment of the presentdisclosure is applicable to a robot, a drone, an automobile, a medicaldevice (endoscope), or the like including the above-described imagingapparatus. Note that the solid-state imaging device 1 according to thepresent embodiment may be formed as a single chip, and can beimplemented in the form of a module having an imaging function in whichan imaging unit and a signal processing unit or an optical system arepackaged together. Hereinafter, an example of an electronic apparatus700 equipped with an imaging apparatus 702 including the solid-stateimaging device 1 according to the present embodiment will be describedas a sixth embodiment with reference to FIG. 18 . FIG. 18 is a diagramillustrating an example of the electronic apparatus 700 equipped withthe imaging apparatus 702 including the solid-state imaging device 1according to an embodiment of the present disclosure.

As illustrated in FIG. 18 , the electronic apparatus 700 includes animaging apparatus 702, an optical lens 710, a shutter mechanism 712, adrive circuit unit 714, and a signal processing circuit unit 716. Theoptical lens 710 focuses image light (incident light) from the subjectonto an imaging surface of the imaging apparatus 702. This allows signalcharges to be stored in the solid-state imaging device 1 of the imagingapparatus 702 for a certain period. The shutter mechanism 712 performsopening/closing operation to control the light emission period and thelight shielding period to the imaging apparatus 702. The drive circuitunit 714 supplies drive signals for controlling signal transferoperation of the imaging apparatus 702, shutter operation of the shuttermechanism 712, or the like. That is, the imaging apparatus 702 performssignal transfer on the basis of the drive signal (timing signal)supplied from the drive circuit unit 714. The signal processing circuitunit 716 performs various types of signal processing. For example, thesignal processing circuit unit 716 outputs a video signal subjected tosignal processing to a storage medium (not illustrated) such as a memorydevice, or outputs the signal to a display unit (not illustrated).

9. SUMMARY

As described above, according to the embodiment of the presentdisclosure, it is possible to improve the light detection sensitivitywhile enabling the miniaturization of pixels.

While the embodiment of the present disclosure described above is anexemplary case of the solid-state imaging device in which the firstconductivity type is the P-type, the second conductivity type is theN-type, and electrons are used as the signal charges, the embodiment ofthe present disclosure is not limited to such an example. For example,the present embodiment is applicable to a solid-state imaging device inwhich the first conductivity type is N-type, the second conductivitytype is P-type, and holes are used as signal charges.

In the embodiment of the present disclosure described above, thesemiconductor substrate 10 need not be a silicon substrate, and may beanother substrate (for example, a Silicon On Insulator (SOI) substrateor a SiGe substrate). Furthermore, the semiconductor substrate 10 mayinclude a semiconductor structure or the like formed on such varioussubstrates.

Furthermore, the solid-state imaging device according to the embodimentof the present disclosure is not limited to the solid-state imagingdevice that detects the distribution of the incident light amount ofvisible light and forms an image. For example, the present embodiment isapplicable to a solid-state imaging device that forms an image from anincident amount distribution such as infrared rays, X-rays, orparticles, or other type of solid-state imaging device (physicalquantity distribution detection apparatus) that detects distribution ofother physical quantity such as pressure and capacitance and forms animage, such as a fingerprint detection sensor.

10. SUPPLEMENT

The preferred embodiments of the present disclosure have been describedin detail above with reference to the accompanying drawings. However,the technical scope of the present disclosure is not limited to suchexamples. It is obvious that a person having ordinary knowledge in thetechnological field of the present disclosure can conceive alterationsor modifications within the scope of the technical concept describedhere in the claims, and these, of course, should understandably belongto the technical scope of the present disclosure.

Furthermore, the effects described in the present specification aremerely illustrative or exemplary and are not limited. That is, thetechnology according to the present disclosure can exhibit other effectsthat are apparent to those skilled in the art from the description ofthe present specification in addition to or instead of the aboveeffects.

The following configurations also belong to the technological scope ofthe present disclosure.

(1)

A solid-state imaging device comprising:

a substrate having a pixel array unit sectioned into a matrix;

a plurality of normal pixels, a plurality of phase difference detectionpixels, and a plurality of adjacent pixels adjacent to the phasedifference detection pixels, each provided in each of the plurality ofsections; wherein

each of the normal pixel, the phase difference detection pixel, and theadjacent pixel has a photoelectric conversion film, and an upperelectrode and a lower electrode that sandwich the photoelectricconversion film in a thickness direction of the photoelectric conversionfilm,the lower electrode, in the normal pixel, is provided separately foreach of sections in which the normal pixel is provided, andthe lower electrode, in the adjacent pixel, extends from the section inwhich the adjacent pixel is provided to the section in which the phasedifference detection pixel adjacent to the adjacent pixel is provided,when viewed from above the substrate.

(2)

The solid-state imaging device according to (1), further comprising alens unit provided above each of the sections.

(3)

The solid-state imaging device according to (2), wherein

the lower electrode of the adjacent pixel is provided to extend from thesection in which the adjacent pixel is provided to cover beyond anoptical axis of the lens unit of the section in which the phasedifference detection pixel adjacent to the adjacent pixel is provided,when viewed from above the substrate.

(4)

The solid-state imaging device according to (2), wherein the lowerelectrode of the phase difference detection pixel and the lowerelectrode of the adjacent pixel adjacent to the phase differencedetection pixel are provided at positions symmetric to each other withrespect to the optical axis of the lens unit of the section in which thephase difference detection pixel is provided, when viewed from above thesubstrate.

(5)

The solid-state imaging device according to any one of (1) to (4),wherein the lower electrode of the phase difference detection pixel hasa rectangular shape or a triangular shape when viewed from above thesubstrate.

(6)

The solid-state imaging device according to any one of (1) to (5),wherein the lower electrode of the adjacent pixel has a rectangularshape or a trapezoidal shape when viewed from above the substrate.

(7)

The solid-state imaging device according to any one of (1) to (4),wherein

the lower electrode of the phase difference detection pixel located in acentral region of the pixel array unit has a rectangular shape, and

the lower electrode of the phase difference detection pixel located in aperipheral region of the pixel array unit has a triangular shape.

(8)

The solid-state imaging device according to any one of (1) to (4),wherein the lower electrode of the phase difference detection pixel andthe lower electrode of the adjacent pixel adjacent to the phasedifference detection pixel are provided at positions symmetric to eachother with respect to a light incident direction in which light isincident onto the section in which the phase difference detection pixelis provided, when viewed from above the substrate.

(9)

The solid-state imaging device according to any one of (1) to (8),further comprising a charge storage unit electrically connected to eachof the lower electrodes via a capacitance,

wherein a capacitance connected to the lower electrode of the adjacentpixel is greater than a capacitance connected to the lower electrode ofthe normal pixel.

(10)

The solid-state imaging device according to (1), wherein

the lower electrode of the phase difference detection pixel is dividedinto two, and one of the lower electrodes is provided to face thephotoelectric conversion film via an insulating film, and is provided asa charge storage electrode that attracts a charge generated in thephotoelectric conversion film.

(11)

The solid-state imaging device according to any one of (1) to (10),further comprising an additional electrode provided between the lowerelectrode of the phase difference detection pixel and the lowerelectrode of the adjacent pixel adjacent to the phase differencedetection pixel when viewed from above the substrate.

(12)

The solid-state imaging device according to (11), further comprising avoltage application part that applies a predetermined voltage to theadditional electrode.

(13)

The solid-state imaging device according to (11) or (12), wherein theadditional electrode is provided on a same plane as the lower electrodeof the phase difference detection pixel and the lower electrode of theadjacent pixel adjacent to the phase difference detection pixel.

(14)

The solid-state imaging device according to any one of (1) to (13),further comprising a detection unit that detects a first outputdifference between the first phase difference detection pixel and theadjacent pixel adjacent to the first phase difference detection pixel,detects a second output difference between a second phase differencedetection pixel paired with the first phase difference detection pixeland the adjacent pixel adjacent to the second phase difference detectionpixel, and that compares the first output difference with the secondoutput difference to detect a phase difference.

(15)

The solid-state imaging device according to any one of (1) to (14),wherein

each of the plurality of normal pixels, the plurality of phasedifference detection pixels, and the plurality of adjacent pixels has astacked structure including a plurality of photoelectric conversionelements that is stacked on each other and that absorbs light ofmutually different wavelengths to generate charges, andat least one of the plurality of photoelectric conversion elementsincludes the photoelectric conversion film, and the upper electrode andthe lower electrode to sandwich the photoelectric conversion film.

(16)

The solid-state imaging device according to (15), wherein at least oneof the plurality of photoelectric conversion elements includes anorganic photoelectric conversion film.

(17)

An electronic apparatus including a solid-state imaging device, thesolid-state imaging device comprising:

a substrate having a pixel array unit sectioned into a matrix;

a plurality of normal pixels, a plurality of phase difference detectionpixels, and a plurality of adjacent pixels adjacent to the phasedifference detection pixels, each provided in each of the plurality ofsections; wherein

each of the normal pixel, the phase difference detection pixel, and theadjacent pixel has a photoelectric conversion film, and an upperelectrode and a lower electrode that sandwich the photoelectricconversion film in a thickness direction of the photoelectric conversionfilm,the lower electrode, in the normal pixel, is provided separately foreach of sections in which the normal pixel is provided, andthe lower electrode, in the adjacent pixel, extends from the section inwhich the adjacent pixel is provided to the section in which the phasedifference detection pixel adjacent to the adjacent pixel is provided,when viewed from above the substrate.

REFERENCE SIGNS LIST

-   1 SOLID-STATE IMAGING DEVICE-   10 SEMICONDUCTOR SUBSTRATE-   12, 14 a, 14 b SEMICONDUCTOR REGION-   16 WIRING LAYER-   18, 402 WIRE-   20 PLUG-   22, 306 INSULATING FILM-   24 CHARGE STORAGE UNIT-   30 PIXEL ARRAY UNIT-   32 VERTICAL DRIVE CIRCUIT UNIT-   34 COLUMN SIGNAL PROCESSING CIRCUIT UNIT-   36 HORIZONTAL DRIVE CIRCUIT UNIT-   38 OUTPUT CIRCUIT UNIT-   40 CONTROL CIRCUIT UNIT-   42 PIXEL DRIVE WIRE-   44 VERTICAL SIGNAL LINE-   46 HORIZONTAL SIGNAL LINE-   48 INPUT/OUTPUT TERMINAL-   50 CENTER POINT-   52 OPTICAL AXIS-   100, 100 a, 100 b, 100 c, 100 x PIXEL-   200, 202, 204 PD-   300 PHOTOELECTRIC CONVERSION FILM-   302 UPPER ELECTRODE-   304 a, 304 b, 304 c, 304 x LOWER ELECTRODE-   308 ADDITIONAL ELECTRODE-   400 TRANSPARENT INSULATING FILM-   500 HIGH REFRACTIVE INDEX LAYER-   502 ON-CHIP LENS-   600 SECTION-   700 ELECTRONIC APPARATUS-   702 IMAGING APPARATUS-   710 OPTICAL LENS-   712 SHUTTER MECHANISM-   714 DRIVE CIRCUIT UNIT-   716 SIGNAL PROCESSING CIRCUIT UNIT

The invention claimed is:
 1. A solid-state imaging device, comprising: asubstrate that comprises a pixel array unit sectioned into a matrix,wherein the pixel array unit comprises a plurality of sections; aplurality of normal pixels, a plurality of phase difference detectionpixels, and a plurality of adjacent pixels adjacent to the plurality ofphase difference detection pixels, wherein each of a normal pixel of theplurality of normal pixels, a phase difference detection pixel of theplurality of phase difference detection pixels, and an adjacent pixel ofthe plurality of adjacent pixels is in each section of the plurality ofsections, each of the normal pixel, the phase difference detectionpixel, and the adjacent pixel has a photoelectric conversion film, andan upper electrode and a lower electrode that sandwich the photoelectricconversion film in a thickness direction of the photoelectric conversionfilm, the lower electrode, in the normal pixel, is separate for eachsection of the plurality of sections in which the normal pixel ispresent, and the lower electrode, in the adjacent pixel, extends from asection of the plurality of sections in which the adjacent pixel ispresent to a section of the plurality of sections in which the phasedifference detection pixel adjacent to the adjacent pixel is present,when viewed from above the substrate; and a charge storage unitelectrically connected to each of the lower electrode of the phasedifference detection pixel, the lower electrode of the adjacent pixel,and the lower electrode of the normal pixel via a capacitance, wherein acapacitance connected to the lower electrode of the adjacent pixel isgreater than a capacitance connected to the lower electrode of thenormal pixel.
 2. The solid-state imaging device according to claim 1,further comprising a lens unit above each section of the plurality ofsections.
 3. The solid-state imaging device according to claim 2,wherein the lower electrode of the adjacent pixel extends from thesection in which the adjacent pixel is present to cover beyond anoptical axis of the lens unit of the section in which the phasedifference detection pixel adjacent to the adjacent pixel is present,when viewed from above the substrate.
 4. The solid-state imaging deviceaccording to claim 2, wherein the lower electrode of the phasedifference detection pixel and the lower electrode of the adjacent pixeladjacent to the phase difference detection pixel are present atpositions symmetric to each other with respect to an optical axis of thelens unit of the section in which the phase difference detection pixelis present, when viewed from above the substrate.
 5. The solid-stateimaging device according to claim 1, wherein the lower electrode of thephase difference detection pixel has one of a rectangular shape or atriangular shape when viewed from above the substrate.
 6. Thesolid-state imaging device according to claim 1, wherein the lowerelectrode of the adjacent pixel has one of a rectangular shape or atrapezoidal shape when viewed from above the substrate.
 7. Thesolid-state imaging device according to claim 1, wherein the lowerelectrode of the phase difference detection pixel in a central region ofthe pixel array unit has a rectangular shape, and the lower electrode ofthe phase difference detection pixel in a peripheral region of the pixelarray unit has a triangular shape.
 8. The solid-state imaging deviceaccording to claim 1, wherein the lower electrode of the phasedifference detection pixel and the lower electrode of the adjacent pixeladjacent to the phase difference detection pixel are present atpositions symmetric to each other with respect to a light incidentdirection in which light is incident onto the section in which the phasedifference detection pixel is present, when viewed from above thesubstrate.
 9. The solid-state imaging device according to claim 1,wherein the lower electrode of the phase difference detection pixel isdivided into two, one of the lower electrode of the phase differencedetection pixel, the lower electrode of the adjacent pixel, or the lowerelectrode of the normal pixel is present to face the photoelectricconversion film via an insulating film, and one of the lower electrodeof the phase difference detection pixel, the lower electrode of theadjacent pixel, or the lower electrode of the normal pixel is present asa charge storage electrode that attracts a charge generated in thephotoelectric conversion film.
 10. The solid-state imaging deviceaccording to claim 1, further comprising an additional electrode presentbetween the lower electrode of the phase difference detection pixel andthe lower electrode of the adjacent pixel adjacent to the phasedifference detection pixel when viewed from above the substrate.
 11. Thesolid-state imaging device according to claim 10, further comprising avoltage application part that applies a voltage to the additionalelectrode.
 12. The solid-state imaging device according to claim 10,wherein the additional electrode is present on a same plane as the lowerelectrode of the phase difference detection pixel and the lowerelectrode of the adjacent pixel adjacent to the phase differencedetection pixel.
 13. The solid-state imaging device according to claim1, further comprising circuitry configured to: detect a first outputdifference between a first phase difference detection pixel of theplurality of phase difference detection pixels and the adjacent pixeladjacent to the first phase difference detection pixel; detect a secondoutput difference between a second phase difference detection pixel ofthe plurality of phase difference detection pixels paired with the firstphase difference detection pixel and the adjacent pixel adjacent to thesecond phase difference detection pixel; and compare the first outputdifference with the second output difference to detect a phasedifference.
 14. The solid-state imaging device according to claim 1,wherein each of the plurality of normal pixels, the plurality of phasedifference detection pixels, and the plurality of adjacent pixels has astacked structure including a plurality of photoelectric conversionelements that is stacked, each of the plurality of photoelectricconversion elements absorb light of mutually different wavelengths togenerate a plurality of charges, and at least one of the plurality ofphotoelectric conversion elements includes the photoelectric conversionfilm, and the upper electrode and the lower electrode to sandwich thephotoelectric conversion film.
 15. The solid-state imaging deviceaccording to claim 14, wherein at least one of the plurality ofphotoelectric conversion elements includes an organic photoelectricconversion film.
 16. An electronic apparatus including a solid-stateimaging device, the solid-state imaging device comprising: a substratethat comprises a pixel array unit sectioned into a matrix, wherein thepixel array unit comprises a plurality of sections; a plurality ofnormal pixels, a plurality of phase difference detection pixels, and aplurality of adjacent pixels adjacent to the plurality of phasedifference detection pixels, wherein each of a normal pixel of theplurality of normal pixels, a phase difference detection pixel of theplurality of phase difference detection pixels, and an adjacent pixel ofthe plurality of adjacent pixels is in each section of the plurality ofsections, each of the normal pixel, the phase difference detectionpixel, and the adjacent pixel has a photoelectric conversion film, andan upper electrode and a lower electrode that sandwich the photoelectricconversion film in a thickness direction of the photoelectric conversionfilm, the lower electrode, in the normal pixel, is separate for eachsection of the plurality of sections in which the normal pixel ispresent, and the lower electrode, in the adjacent pixel, extends from asection of the plurality of sections in which the adjacent pixel ispresent to a section of the plurality of sections in which the phasedifference detection pixel adjacent to the adjacent pixel is present,when viewed from above the substrate; and a charge storage unitelectrically connected to each of the lower electrode of the phasedifference detection pixel, the lower electrode of the adjacent pixel,and the lower electrode of the normal pixel via a capacitance, wherein acapacitance connected to the lower electrode of the adjacent pixel isgreater than a capacitance connected to the lower electrode of thenormal pixel.